Mikrovalno pojačalo s AlGaN/GaN tranzistorom s efektom polja

Karač, Marija

prikaz prve stranice dokumenta Mikrovalno pojačalo s AlGaN/GaN tranzistorom s efektom polja

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master's thesis

Mikrovalno pojačalo s AlGaN/GaN tranzistorom s efektom polja

Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing, 2015. urn:nbn:hr:168:347629

Karač, Marija

University of Zagreb
Faculty of Electrical Engineering and Computing

Cite this document

APA 6th Edition

Karač, M. (2015). Mikrovalno pojačalo s AlGaN/GaN tranzistorom s efektom polja (Master's thesis). Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing. Retrieved from https://urn.nsk.hr/urn:nbn:hr:168:347629

MLA 8th Edition

Karač, Marija. "Mikrovalno pojačalo s AlGaN/GaN tranzistorom s efektom polja." Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2015. https://urn.nsk.hr/urn:nbn:hr:168:347629

Chicago 17th Edition

Karač, Marija. "Mikrovalno pojačalo s AlGaN/GaN tranzistorom s efektom polja." Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2015. https://urn.nsk.hr/urn:nbn:hr:168:347629

Harvard

Karač, M. (2015). 'Mikrovalno pojačalo s AlGaN/GaN tranzistorom s efektom polja', Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, accessed 16 April 2024, https://urn.nsk.hr/urn:nbn:hr:168:347629

Vancouver

Karač M. Mikrovalno pojačalo s AlGaN/GaN tranzistorom s efektom polja [Master's thesis]. Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing; 2015 [cited 2024 April 16] Available at: https://urn.nsk.hr/urn:nbn:hr:168:347629

IEEE

M. Karač, "Mikrovalno pojačalo s AlGaN/GaN tranzistorom s efektom polja", Master's thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, Zagreb, 2015. Available at: https://urn.nsk.hr/urn:nbn:hr:168:347629

Cite this item: https://urn.nsk.hr/urn:nbn:hr:168:347629

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Metadata

Title	Mikrovalno pojačalo s AlGaN/GaN tranzistorom s efektom polja
Title (english)	Microwave amplifier with AlGaN/GaN field-effect transistor
Author	Marija Karač
Mentor	Dubravko Babić (mentor)
Committee member	Dubravko Babić (predsjednik povjerenstva)
Committee member	Zvonimir Šipuš (član povjerenstva)
Committee member	Marko Bosiljevac (član povjerenstva)
Granter	University of Zagreb Faculty of Electrical Engineering and Computing Zagreb
Defense date and country	2015-07-01, Croatia
Scientific / art field, discipline and subdiscipline	TECHNICAL SCIENCES Electrical Engineering
Abstract	Ovaj rad opisuje dizajn i izradu uskopojasnog jednostupanjskog RF pojačala snage, koje radi u klasi AB, na 2 GHz. Korišten je AlGaN/GaN HEMT s visokom pokretljivošću elektrona. Opisan je proračun mreža za ugađanje ulazne i izlazne impedancije, proces izrade tiskane pločice te mjerenja i ugađanja pasivnih komponenti da bi se dobili rezultati na 2GHz.
Abstract (english)	This work describes design and production of narrowband single stage RF power amplifier, operating in class AB, with working frequency of 2GHz. For active element is chosen AlGaN/GaN HEMT, which contains high mobility electrons. In detail is described estimation of input and output matching networks, process of manufacturing PCB (printed circuit board), measuring and tuning of passive elements, in order to get results on 2 GHz.
Keywords
Keywords (english)
Language	croatian
URN:NBN	urn:nbn:hr:168:347629
Study programme	Title: Information and Communication Technology Study programme type: university Study level: graduate Academic / professional title: magistar/magistra inženjer/inženjerka informacijske i komunikacijske tehnologije (magistar/magistra inženjer/inženjerka informacijske i komunikacijske tehnologije)
Type of resource	Text
File origin	Born digital
Access conditions	Closed access
Terms of use
Public note
Repository	FER Repository
Created on	2018-02-06 09:35:09

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